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  1/10 rev. d structure silicon monolithic integrated circuit product name for dsc/dvc motor driving ic model name BD5520GU physical dimension fig.1 block diagram fig.2 terminal equivalent circuit diagram fig.3 function ?power mos-h bridge 4ch ?comparator 2ch ?under voltage protection circuit ?over voltage protection circuit ?a radiation is not designed.
2/10 rev. d physical dimension package type name vcsp85h2 fig- physical dimension unit?
3/10 rev. d chip backside pin arrangement e out2f in2a cpi1 in3a out3f d out2r vcc1 cpo1 in3b out3r c gnd1 in1b in2b in4b gnd2 b out1r cpo2 vcc2 out4r a out1f in1a cpi2 in4a out4f each terminal explanation pin no. terminal name terminal explanation 1-a out1f hbridge ch1 forward output 2-a in1a hbridge ch1 input 3-a cpi2 comparator2 input 4-a in4a hbridge ch4 input a 5-a out4f hbridge ch4 forward output 1-b out1r hbridge ch1 reverse output 2-b - - 3-b cpo2 comparator2 output 4-b vcc2 vcc voltage 5-b out4r hbridge ch4 reverse output 1-c gnd1 ground 2-c in1b hbridge ch1 input b 3-c in2b hbridge ch2 input b 4-c in4b hbridge ch4 input b 5-c gnd2 ground 1-d out2r hbridge ch2 reverse output 2-d vcc1 vcc voltage 3-d cpo1 comparator1 output 4-d in3b hbridge ch3 input b 5-d out3r hbridge ch3 reverse output 1-e out2f hbridge ch2 forward output 2-e in2a hbridge ch2 input a 3-e cpi1 comparator1 input 4-e in3a hbridge ch3 input a 5-e out3f hbridge ch3 forward output 1 2 3 4 5
4/10 rev. d measurement circuit diagram fig2 measurement circuit power driver ch1 1b 1a 2d 1c out1f vcc1 out1r gnd1 control logic 2a 2c in1a in1b power driver ch3 5d 5e 4b 5c out3f vcc2 out3r gnd2 control logic 4e 4d in3a in3b 1d 1e out2r out2f control logic 2e 3c in2a in2b power driver ch2 5b out4r out4f control logic 4a 4c in4a in4b power driver ch4 bias(lvs) 3e 3a cpi1 cpi2 5a 3d 3b cpo1 cpo2 a1 a2 vref1 10[k] 10[k]
5/10 rev. d terminal equivalent circuit diagram hbridge pin no. equivalent circuit pin no. equivalent circuit (in1a) (in1b) (in2a) (in2b) (in3a) d (in3b) a (in4a) c (in4b) (out1f) 1 (out1r) (out2f) (out2r) (out3f) (out3r) (out4f) (out4r) amp pin no. equivalent circuit pin no. equivalent circuit (cpi1) (cpi2) (cpo1) (cpo2) fig3 terminal equivalent circuit diagram gnd vcc out*f out*r vcc gnd 100k vcc gnd vcc gnd
6/10 rev. d absolute maximum ratings item symbol standard value unit power supply voltage vcc 7.0 v h bridge output current1 iout1 200 ma h bridge output current2 iout2 300 ma power dissipation *2 pd 505 mw operation temperature range topr -1070 storage temperature range tstg -40125 (*1) instantaneous current (1[us] or less) (*2) mounting board specificationrohm standard board materialthe glass fabric base epoxy dimensions50[mm]58[mm]1 .75[mm] (8 layers) operating condition item symbol min. typ. max. unit vcc power supply voltage vcc 2.4 5.0 5.5 v comparator pull up resistance cpr 7.5 - - k power dissipation (mounting board) 0 150 ambient tempreture ta 0 power dissipationpd[mw] 323 505 70 25 mounting board specification ( rohm standard board ) materialthe glass fabric size5 50[mm]58[mm]1.75[mm] (8 layers) (8 layers)
7/10 rev. d electrical characteristic circuit current (vcc=5.0[v],ta=25[] except as otherwise noted ) item symbol standard value unit notes min. typ. max. current consumption at standby sicc - (1) 10 a at in*a=in*b=cpi*=l current consumption when operating bicc 410 615 a rl=open, at in*a=h, in*b=l, cpi*=l the current that flows to comp pull up r is excluded. amp(vcc=5.0[v],ta=25[] except as otherwise noted ) item symbol standard value unit notes min. typ. max. input current cpiil 1 a output terminal voltage l cpoutl 0.07 0.3 v amp*in 0.0[v] at 10[k]pull up r output leak current cpoutil 1 a amp*in 3.3[v] reference voltage cpbias 1.7 1.8 1.9 v amp*in 03.3[v] hysteresis voltage cphys 300 400 500 mv delay time r cprise 0.4 10 s amp*in 3.30[v] at 10[k]pull up r delay time f cpfall 0.4 10 s amp*in 03.3[v] at 10[k]pull up r h-bridge(vc=5.0[v],ta=25[] rl=open,cl=0[pf] except as otherwise noted ) item symbol standard value unit notes min. typ. max. l input voltage lvil gnd 0.5 v h input voltage lvih 2.0 vcc v l input current liil -1 a l input =0[v] h input current liih 21.0 35.0 52.5 a h input =3.3[v] output on resistance hron 0.85 1.4 the sum of on resistance at the top and bottom i=100[ma] output delay time htrise 0.1 2 sec htfall 0.1 2 sec minimum output pulse width htmin 400 nsec output pulse width 1/2tmin more
8/10 rev. d electrical characteristic power-supply voltage detection circuit(vcc=5.0[v],ta=25[] except as otherwise noted ) item symbol standard value unit notes min. typ. max. start up time starttime - 4.0 10.0 s stand bydriver on time threshold voltage lvs vth+ 2.20 2.30 2.40 v lvs vth- 2.10 2.20 2.30 v hysteresis voltage lvs hys 50 100 150 mv operation lower bound voltage lvs op 1 v threshold voltage hvs vth 6.35 6.50 6.65 v logic input truth table input signal output singal ?comparator ?voltage detection circuit in*a in*b out*f out*r h l h l operation h h l l operation l h l h operation l l hiz hiz ready (1)when all ch is a ready state, it becomes a standby.
9/10 rev. d directions 1 absolute maximum ratings this ic might be destroyed when the absolute maximum ratings, s uch as impressed voltages (vc,pvcc,vdd) or the operating temperature range (topr) is exceeded, and whether the destruction is short circuit mode or open circuit mode cannot be specified. please take into consideration the ph ysical countermeasures for safety, such as fusing, if a particular mode that exceeds the absolute maximum rating is ass umed. 2 reverse polarity connection connecting the power line to the ic in reverse polarity (from t hat recommended) will damag e the part. please utilize the direction protection device as a diode in the supply line. 3 power supply line due to switching and emi noise generated by magnetic components (inductors and motors), using electrolytic and ceramic suppress filter capacitors close to the ic power input terminals (vcc and gnd) is recommended. please note: the electrolytic capacitor value decreases at lower temperature s. 4 gnd line the ground line is where the lo west potential and transient vol tages are connected to the ic. 5 thermal design do not exceed the power dissipation (pd) of the package specifi cation rating under actual operation, and please design enough temperature margins. (refer to page 6.) 6 short circuit mode between te rminals and wrong mounting do not mount the ic in the wrong direction and be careful about the reverse-connection of the power connector. moreover, this ic might be des troyed when the dust short the te rminals between them or gnd. 7 radiation strong electromagnetic radiation can cause operation failures. 8 aso(area of safety operation.) do not exceed the maximum aso and the absolute maximum ratings of the output driver. 9 tsd(thermal shut-down) the tsd is activated when the junction temperature (tj) reaches 175 0 c(with +/-25 0 c hysteresis), and the output terminal is switched to hi-z. the tsd circuit aims to intercept ic from high temperature. the guarantee and protection of ic are not purpose. therefore, please do not use this ic after tsd circuit operates, nor use it for assumption that operates the tsd circuit. 10 capacitor between output and gnd if a large capacitor is connected between the output and gnd, this ic might be destroyed when vcc becomes 0v or gnd, because the electric charge accumulated in the capacitor f lows to the output. please set said capacitor to smaller than 0.1f.
10/10 rev. d 11 inspection by the set circuit board the stress might hang to ic by connecting the capacitor to the terminal with low impedance. then, please discharge electricity in each and all process. moreover, in the inspectio n process, please turn off the power before mounting the ic, and turn on after mounting the ic. in addition, please take into consideration the countermeasures for electrostatic damage, such as giving the eart h in assembly process, transportation or preservation. 12e ach input terminal this ic is a monolithic ic, and has p + isolation and p substrate for the element separation. therefor e, a parasitic pn junction is firmed in this p-layer and n-layer of each element. for instance, the resistor or the transistor is connected to the terminal as shown in the figure below. when the gnd voltage potential is greater than the voltage potential at terminals a or b, the pn junction operates as a parasitic diode . in addition, the parasitic npn transistor is formed in said parasitic diode and the n layer of surrounding elements cl ose to said parasitic diode. these parasitic elements are formed in the ic because of the voltage relation. the parasitic element operating causes the wrong operation and destruction. therefore, please be careful so as not to operate the parasitic elements by impressing to input terminals lower voltage than gnd(p substrate). please do not apply the vo ltage to the input terminal when the power-supply voltage is not impressed. moreover, please impress each input t erminal lower than the power-supply voltage or equal to the specified range in the gu aranteed voltage when the power -supply voltage is impressing. simplified structure of ic 13earth drawing pattern ?please lower in plenty the elec tric impedance for vcc and gnd supply line. ?in this ic, comparator gnd and driver gnd are designed the sam e terminal. because the si ze of the chip has been miniaturized. inside of this ic , gnd supply line is separated a nd connected one point of the terminal. please note that the gnd supply voltage is not any changed. 14 reverse brake when you do the reversal brake from the high-velocity revolution note the counter electromotive force. moreover, confirm the output current enough and examine the rotational sp eed which uses the reversal brake. 15about the capacitor between vcc-gnd the vcc-gnd capacitor absorbs t he change in a steep voltage and the current because of the pwm drive. as a result, there is a role to suppr ess the disorder of the vcc vol tage. however, the effect decreases by the influence of the wiring impedance etc. if the capacitor becomes far from ic. arrange the vcc-gnd capacitor near ic. 16bypass capacitor between the supply power supplie s connect the bypass capacitor( 0.1f) near the pin of this ic. terminal a parasitic element gnd p + p p -substrate gnd p p -substrate cb gnd e e c b gnd resister transistor (npn) p + p + p + terminal a parasitic element terminalb parasitic element terminalb parasitic element surrounding elements
r1010 a www.rohm.com ? 2010 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specied herein is subject to change for improvement without notice. the content specied herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. great care was taken in ensuring the accuracy of the information specied in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specied herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specied in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, re or any other damage caused in the event of the failure of any product, such as derating, redunda ncy, re control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specied herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.


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